Analysis of temperature and wave function penetration effects in nanoscale double-gate MOSFETs
نویسندگان
چکیده
منابع مشابه
Numerical Simulation of Nanoscale Double-gate Mosfets
ABSTRACT The further improvement of nanoscale electron devices requires support by numerical simulations within the design process. After a briefly description of our 2D/3D-device simulator SIMBA, the results of the simulation of DG-MOSFETs are represented. Starting from a basic structure with a gate length of 30 nm, a calibration of model parameters was done based on measured values from liter...
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ژورنال
عنوان ژورنال: Applied Nanoscience
سال: 2012
ISSN: 2190-5509,2190-5517
DOI: 10.1007/s13204-012-0090-z